Indian-American Amit Goyal of ORNL wins E.O. Lawrence Award from US Dept of Energy
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Dr. Amit Goyal, a high temperature superconductivity (HTS) researcher at Oak Ridge National Laboratory, has been named a winner of the Department of Energy's Ernest Orlando Lawrence Award honoring U.S. scientists and engineers for exceptional contributions in research and development supporting DOE and its mission.
Winner of the award in the inaugural category of Energy Science and Innovation, Dr. Goyal was cited for his work in "pioneering research and transformative contributions to the field of applied high temperature superconductivity, including fundamental materials science advances and technical innovations enabling large-scale applications of these novel materials."
Following his basic research in grain-to-grain supercurrent transport, Dr. Goyal focused his energy in transitioning this fundamental understanding into cutting-edge technologies. Under OE sponsorship, Dr. Goyal co-invented the Rolling Assisted Bi-Axially Textured Substrate technology (RABiTS) that is used as a substrate for second generation HTS wires. OE support also led to the invention of Structural Single Crystal Faceted Fiber Substrate (SSIFFS) and the 3-D Self Assembly of Nanodot Columns.
These inventions and associated R&D resulted in 7 R&D 100 Awards including the 2010 R&D Magazine's Innovator of the Year Award, 3 Federal Laboratory Consortium Excellence in Technology Transfer National Awards, a DOE Energy100 Award and many others. As a world authority on HTS materials, Dr. Goyal has presented OE-sponsored results in more than 150 invited talks, co-authored more than 350 papers and is a fellow of 7 professional societies.
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